ln this study, inverted PSCs were fabricated on stainless steel substrates with n-Cu₂O as the ESTL. The n-Cu₂O films were prepared by electrodeposition method, followed by annealing under ambient conditions. The active layer material was prepared as bulk heterojunction blend using regioregular P₃HT and PCBM. PEDOT:PSS was used as the hole transport layer and the final device structure was SS/n-Cu₂O/P3HT PCBM/PEDOT:PSS/Au. Annealing of the n-Cu₂O ESTL in air was optimized observing the photoactive performance of the device. Optoelectronic performance of the devices was characterized using spectral response and dark and light current-voltage measurements. n-Cu₂O ESTL - incorporated devices have absorbed more photons in the short wavelength region of 450-600 nm with the annealing of n-Cu₂O ESTL due to the reduction of electron-hole recombination. The performance of the devices was significantly increased after incorporating pre-annealed n-Cu₂O ESTL at 175⁰C for 30 min in air. The maximum power conversion efficiency was 0.35%.

W.T.M.A.P.K. Wanninayake, D.G.K.K. Namawardana,,R.M.G. Wanigasekara, K.M.D.C. Jayathilaka, R.P. Wijesundera, R.P. Wijesundera, W.P. Siripala,  

M.I. Malik

Journal of the National Science Foundation of Sri Lanka

Abstract:- https://doi.org/10.4038/jnsfsr.v51i2.11230