Cuprous oxide (Cu2O) is a suitable semiconducting material for fabrication of low-cost, eco-friendly semiconductor junction devices. Besides the parameterization of the growth conditions of Cu2O, formation of metal contacts impact the overall performance of Cu2O junction devices. Modification of the Cu2O thin film surfaces prior to make contacts with Au has shown the capability to alter the junction properties. This study reveals the possibility of employing surface treatments on electrodeposited Cu2O thin films in fabrication of high efficient Cu2O based junction devices.

F.S.B. Kafi, K.M.D.C. Jayathilaka, L.B.D.R.P. Wijesundera and W. Siripala

Journal of the National Science Foundation of Sri Lanka

Abstract :- http://doi.org/10.4038/jnsfsr.v49i1.8942